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BCM857BS,135

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description Nexperia BCM857BS, 135 Dual PNP Transistor, 100 mA, -45 V, 6-Pin SOT-363
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Buying Options
Total Price: USD $0.19
Unit Price: USD $0.1938
≥1 USD $0.1938
≥10 USD $0.1596
≥100 USD $0.1539
≥500 USD $0.14915
≥1000 USD $0.1444
Inventory: 1539
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BCM857
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 175MHz
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 175MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 200

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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