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MMDT5401-7-F
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
Trans GP BJT PNP 150V 0.2A 6-Pin SOT-363 T/R
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥10 USD $0.0665
≥100 USD $0.0646
≥500 USD $0.0627
≥1000 USD $0.05985
Inventory: 8429
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT5401
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -150V
Max Collector Current -200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage -150V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -6V
hFE Min 50
Max Junction Temperature (Tj) 150°C
Continuous Collector Current -200mA
Dimensions
Height 1.1mm
Length 2.2mm
Width 1.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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