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PBHV8118T,215

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR
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Buying Options
Total Price: USD $0.11
Unit Price: USD $0.10735
≥1 USD $0.10735
≥10 USD $0.08835
≥100 USD $0.0855
≥500 USD $0.08265
≥1000 USD $0.08075
Inventory: 5333
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 30MHz
Base Part Number PBHV8118
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 180V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 50mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage 180V
Transition Frequency 30MHz
Max Breakdown Voltage 180V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
Turn Off Time-Max (toff) 2060ns
Turn On Time-Max (ton) 572ns

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

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