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2DB1188Q-13
RoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT 1000W -32Vceo
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.0627
≥1 USD $0.0627
≥10 USD $0.0513
≥100 USD $0.0494
≥500 USD $0.04845
≥1000 USD $0.04655
Inventory: 8206
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 120MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DB1188
Pin Count 4
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 120MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 120MHz
Collector Emitter Saturation Voltage -800mV
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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