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NZT660

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT PNP Transistor Low Saturation
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.16625
≥1 USD $0.16625
≥500 USD $0.1368
≥1000 USD $0.13205
≥2000 USD $0.12825
≥5000 USD $0.1235
≥10000 USD $0.11115
Inventory: 5443
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 188mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3A
Frequency 75MHz
Base Part Number NZT660
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Gain Bandwidth Product 75MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage 550mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 100

Dimensions

Height 1.7mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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