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MMBT8099LT1G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON Semi MMBT8099LT1G NPN Bipolar Transistor; 0.5 A; 80 V; 3-Pin SOT-23
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 9043
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 1.01mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT8099
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
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