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2N3906TA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Transistor General Purpose
PDF
Buying Options
Total Price: USD $0.08
Unit Price: USD $0.079704
≥1 USD $0.079704
≥500 USD $0.058606
≥1000 USD $0.048835
≥2000 USD $0.0448
≥5000 USD $0.041877
≥10000 USD $0.038949
≥15000 USD $0.037669
≥50000 USD $0.037037
Inventory: 8207
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating -200mA
Frequency 250MHz
Base Part Number 2N3906
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Turn On Time-Max (ton) 70 ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NXP USA Inc.