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2SC2712-Y,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 50V 0.15A S-MINI
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.06175
≥1 USD $0.06175
≥500 USD $0.0513
≥1000 USD $0.0494
≥2000 USD $0.0475
≥5000 USD $0.04655
≥10000 USD $0.0418
Inventory: 4453
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON

Technical

Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOW NOISE
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SC2712
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
Continuous Collector Current 150mA

Compliance

RoHS Status RoHS Compliant

Alternative Model

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