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MMBT3906LP-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-UFDFN
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
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Buying Options
Total Price: USD $8.7
Unit Price: USD $1.7404
≥5 USD $1.7404
≥50 USD $1.42785
≥150 USD $1.3832
≥500 USD $1.33855
≥2500 USD $1.2939
Inventory: 4425
Minimum: 5
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Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 250mW
Terminal Position BOTTOM
Base Part Number MMBT3906
Pin Count 3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 250mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -200mA
VCEsat-Max 0.4 V
Turn On Time-Max (ton) 70ns
Collector-Base Capacitance-Max 4.5pF

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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