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PBHV8115Z,115
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
NEXPERIA - PBHV8115Z,115 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
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Buying Options
Total Price: USD $2.78
Unit Price: USD $2.78065
≥1 USD $2.78065
≥10 USD $2.2819
≥100 USD $2.21065
≥500 USD $2.1394
≥1000 USD $2.06815
Inventory: 2963
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.4W
Terminal Form GULL WING
Frequency 30MHz
Base Part Number PBHV8115
Pin Count 4
Number of Elements 1
Element Configuration Dual
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 30MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
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