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PBSS4160T,215

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description PBSS4160T Series 60 V 1 A SMT NPN Low VCEsat (BISS) Transistor - SOT-23-3
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.1387
≥5 USD $0.1387
≥50 USD $0.114
≥150 USD $0.1102
≥500 USD $0.1064
≥3000 USD $0.10355
≥6000 USD $0.09215
Inventory: 145580
Minimum: 5
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+

Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 6.35mm
Length 6.35mm
Width 6.35mm

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 270mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PBSS4160
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Power - Max 400mW
Transistor Application SWITCHING
Gain Bandwidth Product 220MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 220MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 250

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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