Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 625mW
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 260MHz
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) -45V
Max Collector Current -800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage -45V
Current - Collector (Ic) (Max) 800mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C