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MJD243T4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 100V 4A 3-Pin(2+Tab) DPAK T/R
PDF
Buying Options
Total Price: USD $1.34
Unit Price: USD $1.3414
≥1 USD $1.3414
≥10 USD $1.10105
≥100 USD $1.0659
≥500 USD $1.0317
≥1000 USD $0.9975
Inventory: 5361
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 12.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 40MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD243
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 40MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 40
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
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