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2N5551BU
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 160V 0.6A TO-92
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Buying Options
Total Price: USD $0.72
Unit Price: USD $0.7201
≥1 USD $0.7201
≥10 USD $0.5909
≥100 USD $0.57285
≥500 USD $0.55385
≥1000 USD $0.5358
Inventory: 9341
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 600mA
Frequency 300MHz
Base Part Number 2N5551
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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