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MJD44H11T4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 80V 8A DPAK
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.40399
≥1 USD $0.40399
≥10 USD $0.38113
≥100 USD $0.35955
≥500 USD $0.3392
≥1000 USD $0.32
≥3000 USD $0.30189
Inventory: 2301
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 2.4mm
Length 6.6mm
Width 6.2mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 20W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD44
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
VCEsat-Max 1 V

Alternative Model

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