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PBSS4041PT,215
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
NEXPERIA - PBSS4041PT,215 - Bipolarer Einzeltransistor (BJT), PNP, -60 V, 150 MHz, 390 mW, -2.7 A, 300 hFE
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Buying Options
Total Price: USD $0.97
Unit Price: USD $0.9671
≥1 USD $0.9671
≥10 USD $0.79325
≥100 USD $0.76855
≥500 USD $0.74385
≥1000 USD $0.71915
Inventory: 6286
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 150MHz
Base Part Number PBSS4041P
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2.7A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 360mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 35
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Rochester Electronics, LLC