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FZT855TA
RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 150V 5A 4-Pin(3+Tab) SOT-223 T/R
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥30 USD $0.2204
≥100 USD $0.2128
≥500 USD $0.20615
≥1000 USD $0.1843
Inventory: 2144
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 150V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 90MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZT855
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 90MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 355mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 90MHz
Collector Emitter Saturation Voltage 355mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 5A
Dimensions
Height 1.65mm
Length 6.7mm
Width 3.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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