Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage 200V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -350mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 220V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -300mA