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MMBTA14LT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS NPN DARL 30V 0.3A SOT23
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.03515
≥10 USD $0.03515
≥100 USD $0.02945
≥300 USD $0.0285
≥3000 USD $0.02755
≥6000 USD $0.0266
≥9000 USD $0.02375
Inventory: 3010
Minimum: 10
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+

Technical Details

Supply Chain

Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 940μm
Length 2.9mm
Width 1.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 300mA
Base Part Number MMBTA14
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Continuous Collector Current 300mA

Alternative Model

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