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MMBTA55LT1G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON Semi MMBTA55LT1G PNP Bipolar Transistor; 0.5 A; 60 V; 3-Pin SOT-23
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥500 USD $0.0665
≥1000 USD $0.0646
≥2000 USD $0.0627
≥5000 USD $0.05985
≥10000 USD $0.05415
Inventory: 6647
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTA55
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
Dimensions
Height 1.01mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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