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MMBT5551LT1G
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 160V 0.6A SOT23
PDF
Buying Options
Total Price: USD $0.38
Unit Price: USD $0.019
≥20 USD $0.019
≥200 USD $0.01615
≥600 USD $0.0152
≥3000 USD $0.0152
≥9000 USD $0.01425
≥21000 USD $0.0133
Inventory: 360
Minimum: 20
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 160V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Base Part Number MMBT5551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Max Junction Temperature (Tj) 150°C
VCEsat-Max 0.2 V
Dimensions
Height 1.11mm
Length 2.9mm
Width 1.3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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