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ULN2002A
RoHS 
RoHS compliant
RoHS compliantPackage 16-DIP (0.300, 7.62mm)
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
STMICROELECTRONICS ULN2002A Bipolar Transistor Array, Darlington, NPN, 50 V, 500 mA, 1000 hFE, DIP
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Buying Options
Total Price: USD $10.38
Unit Price: USD $0.41515
≥25 USD $0.41515
Inventory: 5000
Minimum: 25
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Contact Plating Gold
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-DIP (0.300, 7.62mm)
Number of Pins 16
Weight 1.627801g
Transistor Element Material SILICON
Dimensions
Height 4.59mm
Length 20mm
Width 7.1mm
Technical
Operating Temperature -40°C~85°C TA
Packaging Tube
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Terminal Position DUAL
Current Rating 500mA
Base Part Number ULN2002
Pin Count 16
Output Voltage 50V
Number of Elements 7
Polarity NPN
Configuration COMPLEX
Number of Channels 7
Transistor Application SWITCHING
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.1V
VCEsat-Max 1.6 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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