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PBSS4220PANSX

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 6-UDFN Exposed Pad
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description TRANS 2NPN 20V 2A 6HUSON
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.535203
≥1 USD $0.535203
≥10 USD $0.504905
≥100 USD $0.476328
≥500 USD $0.449364
≥1000 USD $0.423933
Inventory: 4314
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 370mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101; IEC-60134
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 320mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 120MHz
Max Breakdown Voltage 20V
Frequency - Transition 120MHz

Compliance

RoHS Status ROHS3 Compliant

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