Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 20W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 76 ns
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 21 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Continuous Collector Current 6A
Turn Off Time-Nom (toff) 222 ns
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V