Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 56W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 42A
Reverse Recovery Time 50ns
Collector Emitter Breakdown Voltage 600V
Current - Collector (Ic) (Max) 14A
Max Breakdown Voltage 600V
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Turn Off Time-Nom (toff) 122 ns
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 6.7ns/46ns
Switching Energy 46.5μJ (on), 23.5μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V