Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 75A
Power Dissipation-Max (Abs) 390W
Test Condition 390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A
Turn Off Time-Nom (toff) 161 ns
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/130ns
Switching Energy 255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V