Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 175 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 295 ns
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/175ns
Switching Energy 290μJ (on), 185μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V