Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NGD8201N
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Collector Emitter Breakdown Voltage 440V
Max Breakdown Voltage 440V
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns