Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 140W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 24A
Reverse Recovery Time 68 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.55V
Test Condition 400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 31ns/83ns
Switching Energy 75μJ (on), 225μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V