Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Base Part Number IXG*40N60
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 90 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 25 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 210 ns
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 18ns/90ns
Switching Energy 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V