Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 250 ns
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/145ns
Switching Energy 300μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V