Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 104 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 48A
Reverse Recovery Time 89ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Turn Off Time-Nom (toff) 164 ns
Current - Collector Pulsed (Icm) 72A
Td (on/off) @ 25°C 41ns/104ns
Switching Energy 115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V