Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Continuous Drain Current (ID) 40A
Collector Emitter Breakdown Voltage 600V
Drain to Source Breakdown Voltage 600V
Collector Emitter Saturation Voltage 3V
Test Condition 300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 190 ns
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 15ns/65ns
Switching Energy 470μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 250 ns