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STGB19NC60KDT4
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 35A 125W D2PAK
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Buying Options
Total Price: USD $2.07
Unit Price: USD $2.07385
≥1 USD $2.07385
≥10 USD $1.7024
≥30 USD $1.6492
≥100 USD $1.596
Inventory: 407
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Base Part Number STGB19
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 35A
Reverse Recovery Time 31 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 38 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Turn Off Time-Nom (toff) 270 ns
Gate Charge 55nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 30ns/105ns
Switching Energy 165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
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