Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 167W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 40ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Test Condition 400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 38ns/149ns
Switching Energy 200μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V