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IXGH28N120BD1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 250W TO247
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Buying Options
Total Price: USD $10.21
Unit Price: USD $10.21345
≥1 USD $10.21345
≥10 USD $8.37995
≥100 USD $8.1187
≥500 USD $7.8565
≥1000 USD $7.5943
Inventory: 6965
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*28N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 63 ns
Test Condition 960V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A
Turn Off Time-Nom (toff) 590 ns
IGBT Type PT
Gate Charge 92nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 30ns/210ns
Switching Energy 2.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
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