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IXGH48N60A3D1

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description IGBT 600V 300W TO247AD
Buying Options
Total Price: USD $40.27
Unit Price: USD $40.2724
≥1 USD $40.2724
≥10 USD $33.04385
≥30 USD $32.0112
≥90 USD $30.97855
Inventory: 295
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35V
Max Collector Current 300A
Reverse Recovery Time 25ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.18V
Turn On Time 54 ns
Test Condition 480V, 32A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 32A
Turn Off Time-Nom (toff) 925 ns
IGBT Type PT
Gate Charge 110nC
Td (on/off) @ 25°C 25ns/334ns
Switching Energy 950μJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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