Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35V
Max Collector Current 300A
Reverse Recovery Time 25ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.18V
Test Condition 480V, 32A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 32A
Turn Off Time-Nom (toff) 925 ns
Td (on/off) @ 25°C 25ns/334ns
Switching Energy 950μJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V