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IXGP48N60A3

IXYS
RoHS
/
Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description DISC IGBT PT-LOW FREQUENCY TO-22
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Buying Options
Total Price: USD $4.24
Unit Price: USD $4.24
≥1 USD $4.24
≥10 USD $4
≥100 USD $3.77358
≥500 USD $3.55999
≥1000 USD $3.35848
≥3000 USD $3.16837
Inventory: 2225
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Series GenX3?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 30ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 120A
Power Dissipation-Max (Abs) 300W
Turn On Time 54 ns
Test Condition 480V, 32A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 32A
Turn Off Time-Nom (toff) 925 ns
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 25ns/334ns
Switching Energy 950μJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V

Compliance

RoHS Status Non-RoHS Compliant

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