Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 555W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 475 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Reverse Recovery Time 65 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.8V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Max Junction Temperature (Tj) 175°C
Continuous Collector Current 80A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/475ns
Switching Energy 2.7mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V