Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Base Part Number FGH40N60
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 1.2kV
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Turn Off Time-Nom (toff) 150 ns
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/115ns
Switching Energy 1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V