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HGTG20N60A4
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 70A 290W TO247
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Buying Options
Total Price: USD $4
Unit Price: USD $4.00235
≥1 USD $4.00235
≥10 USD $3.28415
≥100 USD $3.18155
≥500 USD $3.07895
≥1000 USD $2.97635
Inventory: 4923
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 290W
Current Rating 70A
Base Part Number HGTG20N60
Number of Elements 1
Element Configuration Single
Power Dissipation 290W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Rise Time 12 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 73 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 28 ns
Test Condition 390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
Gate Charge 142nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 15ns/73ns
Switching Energy 105μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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