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IRG4BC20SPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 19A 60W TO220AB
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.88635
≥1 USD $0.88635
≥200 USD $0.7277
≥500 USD $0.7049
≥1000 USD $0.6821
Inventory: 4929
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Position SINGLE
Current Rating 19A
Number of Elements 1
Element Configuration Dual
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 27 ns
Transistor Application POWER CONTROL
Rise Time 9.7 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 540 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 19A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.4V
Turn On Time 38 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1540 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 27ns/540ns
Switching Energy 120μJ (on), 2.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Dimensions
Height 8.77mm
Length 10.54mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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