Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 330W
Base Part Number IRGP4063D
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 300V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 2.14V
Max Collector Current 96A
Reverse Recovery Time 115 ns
Continuous Drain Current (ID) 96A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.14V
Test Condition 400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A
Turn Off Time-Nom (toff) 210 ns
Current - Collector Pulsed (Icm) 144A
Td (on/off) @ 25°C 60ns/145ns
Switching Energy 625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V