Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Element Configuration Single
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 178 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 45ns
Continuous Drain Current (ID) 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Test Condition 390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 366 ns
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 33ns/178ns
Switching Energy 333μJ (on), 537μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V