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IRG4PC50KPBF
RoHS
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Package TO-247-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 52A 200W TO247AC
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Buying Options
Total Price: USD $7.54
Unit Price: USD $7.53635
≥1 USD $7.53635
≥10 USD $6.18355
≥100 USD $5.9907
≥500 USD $5.7969
≥1000 USD $5.60405
Inventory: 969
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 20.3mm
Length 15.875mm
Width 5.3mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 250
Current Rating 52A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 38 ns
Transistor Application POWER CONTROL
Rise Time 34 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 52A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.84V
Turn On Time 72 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Turn Off Time-Nom (toff) 430 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 104A
Td (on/off) @ 25°C 38ns/160ns
Switching Energy 490μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120 ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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