Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRG4BC20UPBF
RoHS
/
Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
Tube Through Hole N-CHANNEL Single IGBT Transistor 2.1V @ 15V 6.5A 52A 60W 180ns
PDF
/
Buying Options
Total Price: USD $5.05
Unit Price: USD $5.0502
≥1 USD $5.0502
≥10 USD $4.1439
≥100 USD $4.0147
≥500 USD $3.8855
≥1000 USD $3.75535
Inventory: 1498
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Current Rating 13A
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Turn On Delay Time 21 ns
Transistor Application POWER CONTROL
Rise Time 13ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 86 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 13A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 530pF
Turn On Time 34 ns
Test Condition 480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 21ns/86ns
Switching Energy 100μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 180ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
No data
Recommended For You
BR101
GeneSiC Semiconductor