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IRGS8B60KPBF
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 600V 28A 167W D2PAK
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Buying Options
Total Price: USD $1.91
Unit Price: USD $1.911582
≥1 USD $1.911582
≥200 USD $0.740476
≥500 USD $0.714218
≥1000 USD $0.701089
Inventory: 8246
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 167W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 28A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRGS8B60KPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 22 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 28A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 43 ns
Test Condition 400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 8A
Turn Off Time-Nom (toff) 220 ns
IGBT Type NPT
Gate Charge 29nC
Current - Collector Pulsed (Icm) 34A
Td (on/off) @ 25°C 23ns/140ns
Switching Energy 160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 56 ns
Dimensions
Height 4.572mm
Length 10.668mm
Width 9.65mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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