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BUP213
RoHS
/
Package TO-220-3
Category Transistors - IGBTs - Single / Transistors - IGBTs - Single
Description
IGBT 1200V 32A 200W TO220
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Buying Options
Total Price: USD $1.1
Unit Price: USD $1.1039
≥1 USD $1.1039
≥10 USD $0.9063
≥100 USD $0.8778
≥500 USD $0.8493
≥1000 USD $0.8208
Inventory: 6647
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 200W
Transistor Application MOTOR CONTROL
Rise Time 70ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 32A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 70 ns
Test Condition 600V, 15A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Turn Off Time-Nom (toff) 400 ns
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 70ns/400ns
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 95ns
Compliance
RoHS Status Non-RoHS Compliant
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