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CY7C1021BV33-12VC

CYPRESS SEMICONDUCTOR CORP
RoHS
/
Package /
Category Memory / Memory
Description PARALLEL J BEND 3-STATE STANDARD SRAM (Memory Format) Memory 70C 2.97V 1048576bit 0.005A
PDF
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Buying Options
Total Price: USD $27.02
Unit Price: USD $27.02465
≥1 USD $27.02465
≥200 USD $22.17395
≥500 USD $21.4814
≥1000 USD $20.7879
Inventory: 4549
Minimum: 1
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Technical Details

Physical

Surface Mount YES
Number of Terminals 44

Technical

JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 44
JESD-30 Code R-PDSO-J44
Qualification Status Not Qualified
Operating Temperature (Max) 70°C
Supply Voltage-Max (Vsup) 3.63V
Power Supplies 3.3V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 2.97V
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.2mA
Organization 64KX16
Output Characteristics 3-STATE
Seated Height-Max 3.7592mm
Memory Width 16
Standby Current-Max 0.005A
Memory Density 1048576 bit
Access Time (Max) 12 ns
Parallel/Serial PARALLEL
I/O Type COMMON
Memory IC Type STANDARD SRAM
Standby Voltage-Min 3V

Dimensions

Length 28.575mm
Width 10.16mm

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

No data

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