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IPD30N03S4L-09

Infineon Technologies AG
RoHS
/
Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PDF
/
Buying Options
Total Price: USD $0.85
Unit Price: USD $0.845367
≥1 USD $0.845367
≥10 USD $0.797516
≥100 USD $0.752376
≥500 USD $0.709789
≥1000 USD $0.669605
Inventory: 7500
Minimum: 1
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Technical Details

Physical

Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON

Technical

Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 28 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 42W

Compliance

RoHS Status RoHS Compliant

Alternative Model

BUK9C3R8-80EJ

NXP USA Inc.

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